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MSKSEMI FDV301NRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
FDV301N
LCSC Part #
C5343307
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 30V 250mA SOT-23
Datasheetpdf iconMSKSEMI FDV301N
In-Stock: 330
330 In stock, ships now
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QtyUnit PriceTotal Amount
10+$ 0.0755$ 0.76
100+$ 0.0601$ 6.01
300+$ 0.0523$ 15.69
3,000+$ 0.0449$ 134.70
6,000+$ 0.0403$ 241.80
9,000+$ 0.0379$ 341.10
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingSOT-23
Drain to Source Voltage30V
Output Capacitance(Coss)5.5pF
Current - Continuous Drain(Id)250mA
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)1.5Ω@4V
Number1 N-channel
Input Capacitance(Ciss)30.6pF
Gate Charge(Qg)1.1nC@10V
TypeN-Channel

Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

These N-channel enhancement mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology has been specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideal for high-efficiency, fast-switching applications.

Features

AI Translation
  • 30V, 0.25A, R DS(ON) = 1.5Ω at VGS = 4V
  • Improved dv/dt capability
  • Fast switching
  • Eco-friendly devices available

Applications

AI Translation
  • Motor Drive - Power Tools - LED Lighting