MSKSEMI FDV301N
| Manufacturer | MSKSEMIAsian Brands |
| MPN | FDV301N |
| LCSC Part # | C5343307 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 250mA SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 5.5pF | |
| Current - Continuous Drain(Id) | 250mA | |
| Operating Temperature - | -50℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| RDS(on) | 1.5Ω@4V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 30.6pF | |
| Gate Charge(Qg) | 1.1nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These N-channel enhancement mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology has been specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideal for high-efficiency, fast-switching applications.
Features
AI Translation
- 30V, 0.25A, R DS(ON) = 1.5Ω at VGS = 4V
- Improved dv/dt capability
- Fast switching
- Eco-friendly devices available
Applications
AI Translation
- Motor Drive - Power Tools - LED Lighting
In-Stock: 330
330 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0755 | $ 0.76 |
| 100+ | $ 0.0601 | $ 6.01 |
| 300+ | $ 0.0523 | $ 15.69 |
| 3,000+ | $ 0.0449 | $ 134.70 |
| 6,000+ | $ 0.0403 | $ 241.80 |
| 9,000+ | $ 0.0379 | $ 341.10 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 5.5pF | |
| Current - Continuous Drain(Id) | 250mA | |
| Operating Temperature - | -50℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| RDS(on) | 1.5Ω@4V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 30.6pF | |
| Gate Charge(Qg) | 1.1nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These N-channel enhancement mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology has been specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideal for high-efficiency, fast-switching applications.
Features
AI Translation
- 30V, 0.25A, R DS(ON) = 1.5Ω at VGS = 4V
- Improved dv/dt capability
- Fast switching
- Eco-friendly devices available
Applications
AI Translation
- Motor Drive - Power Tools - LED Lighting
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



