MSKSEMI IRLML2502
| Manufacturer | MSKSEMIAsian Brands |
| MPN | IRLML2502 |
| LCSC Part # | C5343305 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 4A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 600mV | |
| Pd - Power Dissipation | 1.56W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 30mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 500pF | |
| Gate Charge(Qg) | 5.8nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These N-channel enhancement-mode power MOSFETs are fabricated using Trench DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency fast-switching applications.
Features
AI Translation
- 20V, 4A, R<sub>DS(ON)</sub> = 30mΩ at V<sub>GS</sub> = 4.5V
- Improved dv/dt capability
- Fast switching
- Green devices available
Applications
AI Translation
- Laptop - Load Switch - Handheld Instrument
In-Stock: 615
615 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0827$ 0.0703 | $ 0.35 |
| 50+ | $ 0.0659$ 0.0561 | $ 2.81 |
| 150+ | $ 0.0575$ 0.0489 | $ 7.34 |
| 500+ | $ 0.0512$ 0.0436 | $ 21.80 |
| 3,000+ | $ 0.0461$ 0.0392 | $ 117.60 |
| 6,000+ | $ 0.0436$ 0.0371 | $ 222.60 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 600mV | |
| Pd - Power Dissipation | 1.56W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 30mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 500pF | |
| Gate Charge(Qg) | 5.8nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These N-channel enhancement-mode power MOSFETs are fabricated using Trench DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency fast-switching applications.
Features
AI Translation
- 20V, 4A, R<sub>DS(ON)</sub> = 30mΩ at V<sub>GS</sub> = 4.5V
- Improved dv/dt capability
- Fast switching
- Green devices available
Applications
AI Translation
- Laptop - Load Switch - Handheld Instrument
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



