LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
MSKSEMI FDV304P product image
  • FDV304P thumbnail 1
  • FDV304P thumbnail 2
  • FDV304P thumbnail 3
  • Pinout
  • Footprint
Images for reference only

MSKSEMI FDV304PRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
FDV304P
LCSC Part #
C5343304
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 30V 1.5A SOT-23
Datasheetpdf iconMSKSEMI FDV304P
In-Stock: 2,175
2,175 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.0998$ 0.50
50+$ 0.0787$ 3.94
150+$ 0.0682$ 10.23
500+$ 0.0603$ 30.15
3,000+$ 0.0539$ 161.70
6,000+$ 0.0507$ 304.20
Standard Packaging3000/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingSOT-23
Drain to Source Voltage30V
Output Capacitance(Coss)85pF
Current - Continuous Drain(Id)1.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation1.11W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)900mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)810pF
Gate Charge(Qg)12.5nC@10V
TypeP-Channel

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

These P-channel enhancement-mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideal for high-efficiency, fast-switching applications.

Features

AI Translation
  • -30V, -1.5A, R DS(ON) = 900mΩ at VGS = -10V
  • Fast switching
  • Green device available
  • Suitable for -2.5V gate drive applications

Applications

AI Translation
  • Laptop - Load Switch - Battery Protection - Handheld Instruments