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MSKSEMI NTR4101PT1G-MSRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
NTR4101PT1G-MS
LCSC Part #
C5343303
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 20V 3.2A SOT-23
Datasheetpdf iconMSKSEMI NTR4101PT1G-MS
In-Stock: 1,410
1,410 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.0932$ 0.47
50+$ 0.0737$ 3.69
150+$ 0.064$ 9.60
500+$ 0.0566$ 28.30
3,000+$ 0.0508$ 152.40
6,000+$ 0.0479$ 287.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingSOT-23
Drain to Source Voltage20V
Output Capacitance(Coss)65pF
Current - Continuous Drain(Id)3.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.56W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)70mΩ@4.5V;90mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)550pF
Gate Charge(Qg)4.8nC@4.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

These P-channel enhancement-mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideal for high-efficiency, fast-switching applications.

Features

AI Translation
  • -20V, -3.2A, R DS(ON) = 70mΩ at VGS = -4.5V
  • Improved dv/dt capability
  • Fast switching
  • Available in eco-friendly package

Applications

AI Translation
  • Laptop - Load Switch - Battery Protection - Handheld Instruments