Infineon BSC018N04LS G
| Manufacturer | |
| MPN | BSC018N04LS G |
| LCSC Part # | C534297 |
| Packaging | TDSON-8-EP(5x6) |
| Customer # | |
| Key Attributes | 40V 100A 2V 125W 1.8mΩ@10V 1 N-channel TDSON-8-EP(5x6) Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8-EP(5x6) | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 100A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 1.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 12nF | |
| Gate Charge(Qg) | 150nC@10V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Fast-switching MOSFET for SMPS
- Technology optimized for DC/DC converters
- JEDEC-compliant for target applications
- N-channel; logic level
- Excellent gate charge × RDS(on) figure of merit (FOM)
- Ultra-low on-resistance RDS(on)
- Superior thermal resistance performance
- 100% avalanche tested
- Lead-free plating; RoHS compliant
- Halogen-free per IEC61249-2-21
In-Stock: 50
50 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.049 | $ 1.05 |
| 10+ | $ 1.0247 | $ 10.25 |
| 30+ | $ 1.0101 | $ 30.30 |
| 100+ | $ 0.9938 | $ 99.38 |
Standard Packaging5000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8-EP(5x6) | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 100A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 1.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 12nF | |
| Gate Charge(Qg) | 150nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Fast-switching MOSFET for SMPS
- Technology optimized for DC/DC converters
- JEDEC-compliant for target applications
- N-channel; logic level
- Excellent gate charge × RDS(on) figure of merit (FOM)
- Ultra-low on-resistance RDS(on)
- Superior thermal resistance performance
- 100% avalanche tested
- Lead-free plating; RoHS compliant
- Halogen-free per IEC61249-2-21
C534297 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



