Infineon BSC004NE2LS5
| Manufacturer | |
| MPN | BSC004NE2LS5 |
| LCSC Part # | C534273 |
| Packaging | TDSON-8FL |
| Customer # | |
| Key Attributes | MOSFET N-CH 25V 479A TDSON-8FL |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8FL | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 479A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 188W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.1nF | |
| RDS(on) | 0.45mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 11nF | |
| Gate Charge(Qg) | 135nC@4.5V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET is designed to improve overall efficiency by minimizing switching node ringing in DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low drain-source on-resistance, fast switching speed, and body diode reverse recovery performance.
Features
AI Translation
- Optimized for OR-ing applications
- Ultra-low on-resistance R DS(ON) at VGS = 4.5 V
- 100% avalanche tested
- Excellent thermal resistance performance
- N-channel
- Lead-free lead plating; RoHS compliant
- Halogen-free per IEC61249-2-21
Applications
AI Translation
- OR-ing FET / Load Switch
- DC-DC Conversion
In-Stock: 5,000
5,000 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.5783 | $ 2.58 |
| 10+ | $ 2.1714 | $ 21.71 |
| 30+ | $ 1.9158 | $ 57.47 |
| 100+ | $ 1.6554 | $ 165.54 |
| 500+ | $ 1.5382 | $ 769.10 |
| 1,000+ | $ 1.4861 | $ 1486.10 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8FL | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 479A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 188W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.1nF | |
| RDS(on) | 0.45mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 11nF | |
| Gate Charge(Qg) | 135nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET is designed to improve overall efficiency by minimizing switching node ringing in DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low drain-source on-resistance, fast switching speed, and body diode reverse recovery performance.
Features
AI Translation
- Optimized for OR-ing applications
- Ultra-low on-resistance R DS(ON) at VGS = 4.5 V
- 100% avalanche tested
- Excellent thermal resistance performance
- N-channel
- Lead-free lead plating; RoHS compliant
- Halogen-free per IEC61249-2-21
Applications
AI Translation
- OR-ing FET / Load Switch
- DC-DC Conversion
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



