TECH PUBLIC FDS4465-TP
| Manufacturer | TECH PUBLICAsian Brands |
| MPN | FDS4465-TP |
| LCSC Part # | C5342373 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | MOSFET 20V 14A SOP-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 14A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 2W | |
| RDS(on) | 8.5mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 800pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 8nF | |
| Gate Charge(Qg) | 44.4nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
HSU6105 is a high cell density trench P-channel MOSFET that offers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSU6105 is RoHS compliant and meets green product requirements, 100% tested for avalanche energy capability (EAS), with full functional reliability qualification.
Features
AI Translation
- Ultra-low gate charge
- 100% tested for avalanche energy capability (EAS)
- Green/RoHS-compliant devices available
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
Applications
AI Translation
- PWM applications
- Load switching
In-Stock: 1,566
1,566 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.3119 | $ 0.31 |
| 10+ | $ 0.2724 | $ 2.72 |
| 30+ | $ 0.2549 | $ 7.65 |
| 100+ | $ 0.2344 | $ 23.44 |
| 500+ | $ 0.2074 | $ 103.70 |
| 1,000+ | $ 0.2011 | $ 201.10 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 14A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 2W | |
| RDS(on) | 8.5mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 800pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 8nF | |
| Gate Charge(Qg) | 44.4nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
HSU6105 is a high cell density trench P-channel MOSFET that offers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSU6105 is RoHS compliant and meets green product requirements, 100% tested for avalanche energy capability (EAS), with full functional reliability qualification.
Features
AI Translation
- Ultra-low gate charge
- 100% tested for avalanche energy capability (EAS)
- Green/RoHS-compliant devices available
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
Applications
AI Translation
- PWM applications
- Load switching
C5342373 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



