Infineon BFR 840L3RHESD E6327

The BFR840L3RHESD is a dicrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications.

• Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness
• High transition frequency fT = 75 GHz to enable best in class noise performance at high frequencies: NFmin = 0.65 dB at 5.5 GHz; 1.1 dB at 12 GHz, 1.8 V, 5 mA
• High gain Gms = 22 dB at 5.5 GHz, 1.8 V, 10 mA
• OIP3 = 18 dBm at 5.5 GHz, 1.8 V, 10 mA
• Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding collector resistor)
• Low profile and small form factor leadless package

• Wireless communications: WLAN 2.4 GHz and 5 - 6 GHz bands, WiMAX and UWB
• Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, GLONASS, BeiDou, Galilleo)