Infineon BFP 540ESD H6327

The BFP540ESD is a low noise device based on a grounded emitter (SIEGET) that is part of Infineon’s established fifh generation RF bipolar transistor family. Its ESD structure provides high robustness. It remains cost competitive without compromising on ease of use.

• Minimum noise figure NFmin = 0.9 dB at 1.8 GHz, 2 V, 5 mA
• High gain Gms = 21.5 dB at 1.8 GHz, 2 V, 20 mA
• OIP3 = 24.5 dBm at 1.8 GHz, 2 V, 20 mA
• High ESD robustness, typical 1 kV (HBM)

• Radio-frequency oscillators such as local oscillator in LNB
• Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio
• LNAs for wireless communications such as cordless phones