UMW FDN337N(UMW)
| Manufacturer | UMWAsian Brands |
| MPN | FDN337N(UMW) |
| LCSC Part # | C5340730 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET 30V 2.2A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 145pF | |
| Current - Continuous Drain(Id) | 2.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| RDS(on) | 54mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 300pF | |
| Gate Charge(Qg) | 9nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These devices are particularly suited for low-voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits requiring fast switching and low on-state power dissipation in ultra-compact SMT packages.
Features
AI Translation
- V_DS(V) = 30V
- I_D = 2.2A
- R_DS(ON) < 40mΩ (V_GS = 4.5V)
- R_DS(ON) < 40mΩ (V_GS = 2.5V)
In-Stock: 1,400
1,400 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0371 | $ 0.74 |
| 200+ | $ 0.0288 | $ 5.76 |
| 600+ | $ 0.0241 | $ 14.46 |
| 3,000+ | $ 0.0213 | $ 63.90 |
| 9,000+ | $ 0.0189 | $ 170.10 |
| 21,000+ | $ 0.0176 | $ 369.60 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 145pF | |
| Current - Continuous Drain(Id) | 2.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| RDS(on) | 54mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 300pF | |
| Gate Charge(Qg) | 9nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These devices are particularly suited for low-voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits requiring fast switching and low on-state power dissipation in ultra-compact SMT packages.
Features
AI Translation
- V_DS(V) = 30V
- I_D = 2.2A
- R_DS(ON) < 40mΩ (V_GS = 4.5V)
- R_DS(ON) < 40mΩ (V_GS = 2.5V)
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



