UMW NTR4171PT1G(UMW)
| Manufacturer | UMWAsian Brands |
| MPN | NTR4171PT1G(UMW) |
| LCSC Part # | C5340726 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET 30V 2.2A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 95pF | |
| Current - Continuous Drain(Id) | 2.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.15V | |
| Pd - Power Dissipation | 1.25W | |
| RDS(on) | 50mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 720pF | |
| Gate Charge(Qg) | 15.6nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
AGM2319EL combines advanced trench MOSFET technology with a low-resistance package to achieve extremely low RDS(ON). This device is ideal for load switching and battery protection applications.
Features
AI Translation
- Drain-source voltage (V) = -30 V
- On-resistance < 75 mΩ (V<sub>GS</sub> = -10 V)
- On-resistance < 110 mΩ (V<sub>GS</sub> = -4.5 V)
Applications
AI Translation
- Load switch
- Optimized for battery and load management applications in portable devices (e.g., mobile phones, PDAs, media players, etc.)
In-Stock: 460
460 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0397 | $ 0.40 |
| 100+ | $ 0.0312 | $ 3.12 |
| 300+ | $ 0.027 | $ 8.10 |
| 3,000+ | $ 0.0238 | $ 71.40 |
| 6,000+ | $ 0.0213 | $ 127.80 |
| 9,000+ | $ 0.02 | $ 180.00 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 95pF | |
| Current - Continuous Drain(Id) | 2.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.15V | |
| Pd - Power Dissipation | 1.25W | |
| RDS(on) | 50mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 720pF | |
| Gate Charge(Qg) | 15.6nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
AGM2319EL combines advanced trench MOSFET technology with a low-resistance package to achieve extremely low RDS(ON). This device is ideal for load switching and battery protection applications.
Features
AI Translation
- Drain-source voltage (V) = -30 V
- On-resistance < 75 mΩ (V<sub>GS</sub> = -10 V)
- On-resistance < 110 mΩ (V<sub>GS</sub> = -4.5 V)
Applications
AI Translation
- Load switch
- Optimized for battery and load management applications in portable devices (e.g., mobile phones, PDAs, media players, etc.)
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



