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AGMSEMI AGM412MPARoHS

Manufacturer
AGMSEMIAsian Brands
MPN
AGM412MPA
LCSC Part #
C5340117
Packaging
PDFN5x6-8L
Customer #
Key Attributes
MOSFET N-CH+P-CH ARR 40V 45A PDFN(5x6)
Datasheetpdf iconAGMSEMI AGM412MPA
In-Stock: 2,755
2,755 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.364$ 0.3458$ 1.73
50+$ 0.2831$ 0.2690$ 13.45
150+$ 0.2475$ 0.2352$ 35.28
500+$ 0.2038$ 0.1937$ 96.85
3,000+$ 0.1844$ 0.1752$ 525.60
6,000+$ 0.1715$ 0.1630$ 978.00
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerAGMSEMI
PackagingPDFN5x6-8L
Output Capacitance(Coss)85pF;185pF
Pd - Power Dissipation25W
Configuration-
Drain to Source Voltage40V;40V
Current - Continuous Drain(Id)40A;45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Reverse Transfer Capacitance (Crss@Vds)73pF;162pF
RDS(on)10mΩ@10V;12mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.152nF;2.385nF
Gate Charge(Qg)17nC@10V;30nC@4.5V
TypeN-Channel + P-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

AGM412MPA combines advanced trench MOSFET technology with a low-resistance package to deliver ultra-low RDS(ON). The device is ideal for load switch and battery protection applications.

Features

AI Translation
  • Advanced high cell density trench technology
  • Low RDS(ON) to minimize conduction losses
  • Low gate charge for fast switching
  • Low thermal resistance
  • 100% avalanche tested
  • 100% DVDS tested

Applications

AI Translation
  • MB/VGA core voltage
  • Secondary synchronous rectifier for switching power supplies
  • Point-of-load applications
  • Brushless DC motor driver