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HXY MOSFET ESDA6V8AV6 product image
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HXY MOSFET ESDA6V8AV6RoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
ESDA6V8AV6
LCSC Part #
C5337176
Packaging
SOT-563
Customer #
Key Attributes
ESD DIODE 5VWM 14.4VC SOT-563
Datasheetpdf iconHXY MOSFET ESDA6V8AV6
In-Stock: 765
765 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.0999$ 0.50
50+$ 0.0835$ 4.18
150+$ 0.0753$ 11.30
500+$ 0.0691$ 34.55
3,000+$ 0.0566$ 169.80
6,000+$ 0.0541$ 324.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryCircuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes
ManufacturerHXY MOSFET
PackagingSOT-563
Clamping Voltage14.4V
Operating Temperature-55℃~+125℃
Peak Pulse Current (Ipp)1.6A
Peak Pulse Power Dissipation (Ppp)20W
Number of Channels5
Voltage - Breakdown6.8V
typeESD
Reverse Leakage Current (Ir)500nA
PolarityUnidirectional
Reverse Stand-Off Voltage (Vrwm)5V

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

ESDA6V8AV6 is a 5-channel ultra-low capacitance rail-clamp ESD protection diode array. Each channel consists of a pair of ESD diodes that steer positive or negative ESD currents to the positive or negative supply rail. A Zener diode is integrated between the positive and negative supply rails of the array. In a typical application, the negative supply rail pin (designated as GND) is connected to system ground. Positive ESD current is steered to ground through an ESD diode and the Zener diode, and the positive ESD voltage is clamped to the Zener voltage.

Features

AI Translation
  • Working peak reverse voltage: 5 V
  • Low leakage current: < 1 uA @ 3 V
  • High ESD protection level: >20 kV (HBM standard)
  • IEC61000-4-2 Level 4 ESD protection
  • IEC61000-4-4 Level 4 EFT protection
  • Five independent unidirectional configurations