Kingston D5116AN9CXGXN-TK

This DDR4 SDRAM has a storage density of 8G bits, available in different configurations (e.g., 64M words x 8 bits x 16 banks, 64M words x 16 bits x 8 banks), with package options of 78-ball FBGA and 96-ball FBGA. It is lead-free and halogen-free, with a JEDEC-compliant 1.2V power supply and data rates of 3200/2666Mbps. The device supports various internal bank counts and configurations, along with multiple read/write latency, precharge, and refresh features. Operating temperature ranges differ between commercial and industrial applications.

• Double-data-rate architecture: two data transfers per clock cycle.
• The high-speed data transfer is realized by the 8 bits prefetch pipelined architecture.
• Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver.
• DQS is edge-aligned with data for READs; center- aligned with data for WRITEs.
• Differential clock inputs (CK_t and CK_c).
• DLL aligns DQ and DQS transitions with CK transitions.
• Data mask (DM) write data-in at the both rising and falling edges of the data strobe.
• Write Cycle Redundancy Code (CRC) is supported.
• Programmable preamble for read and write is supported.
• Programmable burst length 4/8 with both nibble sequential and interleave mode.
• BL switch on the fly.
• Driver strength selected by MRS.
• Dynamic On Die Termination supported.
• Two Termination States such as RTT_PARK and RTT_NOM switchable by ODT pin.
• Asynchronous RESET pin supported.
• ZQ calibration supported.
• Write Levelization supported.
• This product in compliance with the RoHS directive.
• Internal Vref DQ level generation is available.
• TCAR(Temperature Controlled Auto Refresh) mode is supported.
• LP ASR(Low Power Auto Self Refresh) mode is supported.
• Command Address (CA) Parity (command/address) mode is supported.
• Per DRAM Addressability (PDA).
• Fine granularity refresh is supported.
• Geardown Mode(1/2 rate, 1/4 rate) is supported.
• Self Refresh Abort is supported.
• Maximum power saving mode is supported.
• Banks Grouping is applied, and CAS to CAS latency(tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available.
• DMI pin support for write data masking and DBIdc functionality.