LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
Infineon AUIRLR3114Z product image
Images for reference only

Infineon AUIRLR3114ZRoHS

Manufacturer
Infineon
MPN
AUIRLR3114Z
LCSC Part #
C533476
Packaging
DPAK
Customer #
Key Attributes
40V 42A 2.5V 140W 4.9mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS
Datasheetpdf iconInfineon AUIRLR3114Z

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingDPAK
Drain to Source Voltage40V
Current - Continuous Drain(Id)42A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)4.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.81nF
Gate Charge(Qg)56nC@4.5V
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This HEXFET power MOSFET is designed for automotive applications, utilizing the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche ratings. Combined, these characteristics make this device a highly efficient and reliable solution for automotive and a wide variety of other applications.

Features

AI Translation
  • Advanced process technology
  • Ultra-low on-resistance
  • Logic-level gate drive
  • 175°C operating temperature
  • Fast switching
  • Repetitive avalanche rated up to maximum junction temperature Tjmax
  • Lead-free, RoHS compliant
  • AEC-Q101 qualified
Not available now