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VISHAY SIR180DP-T1-RE3 product image
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VISHAY SIR180DP-T1-RE3RoHS

Manufacturer
VISHAY
MPN
SIR180DP-T1-RE3
LCSC Part #
C5334421
Packaging
PowerPAKSO-8
Customer #
Key Attributes
MOSFET N-CH 60V 32.4A PowerPAKSO-8
Datasheetpdf iconVISHAY SIR180DP-T1-RE3

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingPowerPAKSO-8
Drain to Source Voltage60V
Output Capacitance(Coss)1.04nF
Current - Continuous Drain(Id)32.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.6V
Pd - Power Dissipation53.3W
Reverse Transfer Capacitance (Crss@Vds)58pF
RDS(on)1.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.03nF
Gate Charge(Qg)44nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Features

AI Translation
  • TrenchFET Gen IV power MOSFET
  • Very low RDS - Qg figure-of-merit (FOM)
  • Tuned for the lowest RDS - Qoss FOM
  • 100 % Rg and UIS tested

Applications

AI Translation
  • Synchronous rectification
  • Primary side switch
  • DC/DC converter
  • Motor drive switch
In-Stock: 469
469 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.8069$ 1.81
10+$ 1.6779$ 16.78
30+$ 1.5966$ 47.90
100+$ 1.3082$ 130.82
500+$ 1.27$ 635.00
1,000+$ 1.254$ 1254.00
Standard Packaging3000/Full Reel
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