QNHCHIP 20N06-Q
| Manufacturer | QNHCHIPAsian Brands |
| MPN | 20N06-Q |
| LCSC Part # | C53338303 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | 50W 60V 20A 1V 50mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | QNHCHIP | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 70pF | |
| Pd - Power Dissipation | 50W | |
| Drain to Source Voltage | 60V | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 20A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| RDS(on) | 50mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 51pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 676pF | |
| Gate Charge(Qg) | 22nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
20N06-Q is an N-channel enhancement-mode power MOSFET fabricated using NSD advanced technology, offering minimal on-resistance and superior switching performance. It is also capable of withstanding high-energy pulses in avalanche and commutation modes. The 20N06-Q is widely used in low-voltage applications such as automotive, high-efficiency switching in DC/DC converters, and DC motor control.
Features
- RDS(ON) ≤ 50 mΩ at VGS = 10V, ID = 5.0A
- RDS(ON) ≤ 65 mΩ at VGS = 4.5V, ID = 5.0A
- High switching speed
Applications
- Automotive
- High-efficiency switching for DC/DC converters
- DC motor control
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0937$ 0.0891 | $ 0.45 |
| 50+ | $ 0.0746$ 0.0709 | $ 3.55 |
| 150+ | $ 0.0651$ 0.0619 | $ 9.29 |
| 500+ | $ 0.058$ 0.0551 | $ 27.55 |
| 2,500+ | $ 0.0523$ 0.0497 | $ 124.25 |
| 5,000+ | $ 0.0494$ 0.0470 | $ 235.00 |
Standard Packaging2500/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | QNHCHIP | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 70pF | |
| Pd - Power Dissipation | 50W | |
| Drain to Source Voltage | 60V | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 20A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| RDS(on) | 50mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 51pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 676pF | |
| Gate Charge(Qg) | 22nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
20N06-Q is an N-channel enhancement-mode power MOSFET fabricated using NSD advanced technology, offering minimal on-resistance and superior switching performance. It is also capable of withstanding high-energy pulses in avalanche and commutation modes. The 20N06-Q is widely used in low-voltage applications such as automotive, high-efficiency switching in DC/DC converters, and DC motor control.
Features
- RDS(ON) ≤ 50 mΩ at VGS = 10V, ID = 5.0A
- RDS(ON) ≤ 65 mΩ at VGS = 4.5V, ID = 5.0A
- High switching speed
Applications
- Automotive
- High-efficiency switching for DC/DC converters
- DC motor control
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

