XNRUSEMI XRC75R60P
| Manufacturer | XNRUSEMIAsian Brands |
| MPN | XRC75R60P |
| LCSC Part # | C53330223 |
| Packaging | TO-247-4L |
| Customer # | |
| Key Attributes | 750V 43A 3.1V 185W 60mΩ 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | TO-247-4L | |
| Drain to Source Voltage | 750V | |
| Current - Continuous Drain(Id) | 43A | |
| Output Capacitance(Coss) | 79pF | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.1V | |
| Pd - Power Dissipation | 185W | |
| RDS(on) | 60mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.161nF | |
| Gate Charge(Qg) | 45nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Revolutionary SiC semiconductor material
- High blocking voltage, low on-resistance
- High-speed switching with ultra-low switching losses
- High-speed, highly robust intrinsic body diode
- Optimized package with separate gate source pin
Applications
AI Translation
- Motor drives
- Electric vehicle battery chargers
- Solar systems
- Power supplies
- Power conversion systems
In-Stock: 34
34 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.272$ 3.1084 | $ 3.11 |
| 10+ | $ 2.7813$ 2.6423 | $ 26.42 |
| 30+ | $ 2.4748$ 2.3511 | $ 70.53 |
| 90+ | $ 2.1602$ 2.0522 | $ 184.70 |
| 510+ | $ 2.0183$ 1.9174 | $ 977.87 |
| 990+ | $ 1.958$ 1.8601 | $ 1841.50 |
Standard Packaging30/Full Tube | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | TO-247-4L | |
| Drain to Source Voltage | 750V | |
| Current - Continuous Drain(Id) | 43A | |
| Output Capacitance(Coss) | 79pF | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.1V | |
| Pd - Power Dissipation | 185W | |
| RDS(on) | 60mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.161nF | |
| Gate Charge(Qg) | 45nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Revolutionary SiC semiconductor material
- High blocking voltage, low on-resistance
- High-speed switching with ultra-low switching losses
- High-speed, highly robust intrinsic body diode
- Optimized package with separate gate source pin
Applications
AI Translation
- Motor drives
- Electric vehicle battery chargers
- Solar systems
- Power supplies
- Power conversion systems
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |



