Infineon AUIRF7739L2TR

The AUIRF7739L2TR combines the latest automotive-grade HEXFET® power MOSFET silicon technology with advanced DirectFET® packaging, achieving ultra-low on-resistance in a package with DPak (TO-252AA) footprint and only 0.7 mm profile. When following the manufacturing methods and process guidelines described in Application Note AN-1035, the DirectFET package is compatible with existing layout geometries, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques used in power applications. The DirectFET package supports dual-side cooling to maximize thermal transfer efficiency in automotive power systems.

This HEXFET® power MOSFET is designed for applications with extremely demanding efficiency and power density requirements. The advanced DirectFET® package platform combined with the latest silicon technology enables the AUIRF7739L2TR to deliver significant system cost savings and performance improvements, making it particularly suitable for motor drive, high-frequency DC-DC, and other heavy-load applications on ICE, HEV, and EV platforms. The MOSFET employs the latest process technology to achieve low on-resistance and low gate charge Qg per unit silicon area. Additional features include a 175°C operating junction temperature and high repetitive peak current capability. These characteristics make it a highly efficient, robust, and reliable device for high-current automotive applications.

• Optimized for automotive motor drives, DC-DC, and other high-load applications
• Ultra-compact package with low profile
• High power density
• Low parasitic parameters
• Dual-side heat dissipation
• Operating temperature up to 175°C
• Repetitive avalanche capability for durability and reliability
• Lead-free, RoHS compliant, and halogen-free
• Automotive-grade certified