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micron MT53E512M32D1ZW-046 WT:B product image
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micron MT53E512M32D1ZW-046 WT:BRoHS

Manufacturer
micron
MPN
MT53E512M32D1ZW-046 WT:B
LCSC Part #
C5330500
Packaging
TFBGA-200
Customer #
Key Attributes
LPDDR4x/LPDDR4 SDRAM
Datasheetpdf iconmicron MT53E512M32D1ZW-046 WT:B
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QtyUnit Price(Reference Only)Total Amount
1+$ 110.6521$ 110.65
3+$ 106.554$ 319.66
30+$ 102.4574$ 3073.72
Standard Packaging136/Full Tray
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
Manufacturermicron
PackagingTFBGA-200
Refresh Current-
Memory Size16Gbit
Voltage - Supply1.06V~1.17V
Operating temperature-25℃~+85℃
Clock Frequency2.133GHz
FeaturesBuilt-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function;Asynchronous reset function;Data mask function
Memory FormatLPDDR4 SDRAM
Current - Supply-
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging136
Sales UnitPiece

Features

AI Translation
  • Ultra-low-voltage core and I/O power supplies - VDD1 = 1.70 - 1.95V; 1.80V nominal - VDD2 = 1.06 - 1.17V; 1.10V nominal - VDDO = 0.57 - 0.65V; 0.60V nominal or VDDQ = 1.06–1.17V; 1.10V nominal
  • Frequency range – 2133–10 MHz (data rate range per pin: 4266–20 Mb/s)
  • 16n prefetch DDR architecture
  • 8 internal banks per channel for concurrent operation
  • Single-data-rate CMD/ADR entry
  • Bidirectional/differential data strobe per byte lane
  • Programmable READ and WRITE latencies (RL/WL)
  • Programmable and on-the-fly burst lengths (BL = 16, 32)
  • Directed per-bank refresh for concurrent bank operation and ease of command scheduling
  • Up to 8.5 GB/s per die x16 channel
  • On-chip temperature sensor to control self refresh rate
  • Partial-array self refresh (PASR)
  • Selectable output drive strength (DS)
  • Clock-stop capability
  • RoHS-compliant, “green” packaging
  • Programmable VSS (ODT) termination
  • Single-ended CK and DQS support