micron MT53E256M32D2FW-046 IT:B

Manufacturer	micron
MPN	MT53E256M32D2FW-046 IT:B
LCSC Part #	C5330484
Packaging	TFBGA-200(10x14.5)
Customer #
Key Attributes	8Gbit 1.06V~1.17V 2.133GHz LPDDR4X SDRAM TFBGA-200(10x14.5) Memory (ICs) RoHS
Datasheet	micron MT53E256M32D2FW-046 IT:B

Products Specifications

Type	Description	All
Category	Integrated Circuits (ICs)/Memory/Memory (ICs)
Manufacturer	micron
Packaging	TFBGA-200(10x14.5)
Refresh Current	470uA
Memory Size	8Gbit
Voltage - Supply	1.06V~1.17V
Operating temperature	-40℃~+95℃
Clock Frequency	2.133GHz
Features	Auto self-refresh;Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function
Memory Format	LPDDR4X SDRAM
Current - Supply	295mA

AI Translation

Ultra-low-voltage core and I/O power supplies – VDD1 = 1.70 - 1.95V; 1.80V nominal – VDD2 = 1.06–1.17V; 1.10V nominal VDDQ = 1.06 - 1.17V; 1.10V nominal or Low VDDQ = 0.57–0.65V; 0.60V nominal
Frequency range – 2133–10 MHz (data rate range: 4266–20 Mb/s/pin)
16n prefetch DDR architecture
8 internal banks per channel for concurrent operation
Single-data-rate CMD/ADR entry
Bidirectional/differential data strobe per byte lane
Programmable READ and WRITE latencies (RL/WL)
Programmable and on-the-fly burst lengths (BL = 16, 32)
Directed per-bank refresh for concurrent bank operation and ease of command scheduling
Up to 8.5 GB/s per die
On-chip temperature sensor to control self refresh rate
Partial-array self refresh (PASR)
Selectable output drive strength (DS)
Clock-stop capability
RoHS-compliant, “green” packaging
Programmable VSS (ODT) termination

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Qty	Unit Price(Reference Only)	Total Amount
1+	$ 20.3109	$ 20.31
5+	$ 19.3597	$ 96.80
30+	$ 18.4084	$ 552.25
Standard Packaging2000/Full Reel

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Type	Description	All
Category	Integrated Circuits (ICs)/Memory/Memory (ICs)
Manufacturer	micron
Packaging	TFBGA-200(10x14.5)
Refresh Current	470uA
Memory Size	8Gbit
Voltage - Supply	1.06V~1.17V
Operating temperature	-40℃~+95℃
Clock Frequency	2.133GHz
Features	Auto self-refresh;Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function
Memory Format	LPDDR4X SDRAM
Current - Supply	295mA

AI Translation

Ultra-low-voltage core and I/O power supplies – VDD1 = 1.70 - 1.95V; 1.80V nominal – VDD2 = 1.06–1.17V; 1.10V nominal VDDQ = 1.06 - 1.17V; 1.10V nominal or Low VDDQ = 0.57–0.65V; 0.60V nominal
Frequency range – 2133–10 MHz (data rate range: 4266–20 Mb/s/pin)
16n prefetch DDR architecture
8 internal banks per channel for concurrent operation
Single-data-rate CMD/ADR entry
Bidirectional/differential data strobe per byte lane
Programmable READ and WRITE latencies (RL/WL)
Programmable and on-the-fly burst lengths (BL = 16, 32)
Directed per-bank refresh for concurrent bank operation and ease of command scheduling
Up to 8.5 GB/s per die
On-chip temperature sensor to control self refresh rate
Partial-array self refresh (PASR)
Selectable output drive strength (DS)
Clock-stop capability
RoHS-compliant, “green” packaging
Programmable VSS (ODT) termination