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DOINGTER DOD3040RoHS

Manufacturer
DOINGTERAsian Brands
MPN
DOD3040
LCSC Part #
C53281979
Packaging
TO-252-4
Customer #
Key Attributes
30V 40A 1.5V 69W 7.5mΩ@10V 2 N-Channel N-Channel TO-252-4 Single FETs, MOSFETs RoHS
Datasheetpdf iconDOINGTER DOD3040
In-Stock: 495
495 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.141$ 0.71
50+$ 0.111$ 5.55
150+$ 0.0959$ 14.39
500+$ 0.0846$ 42.30
2,500+$ 0.0756$ 189.00
5,000+$ 0.0711$ 355.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252-4
Drain to Source Voltage30V
Current - Continuous Drain(Id)40A
Output Capacitance(Coss)137pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)7.5mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)940pF
Gate Charge(Qg)5nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This dual N-channel MOSFET utilizes advanced trench technology and design, delivering excellent RDS(on) and low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS=30V, ID=40A, RDS(ON)<10mΩ@VGS=10V (typical: 7.5mΩ)
  • Low gate charge.
  • RoHS-compliant devices available.
  • Advanced high cell density trench technology for ultra-low RDS(ON).
  • Excellent package with superior thermal dissipation.
  • MSL3 rating.