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DOINGTER DOD5521RoHS

Manufacturer
DOINGTERAsian Brands
MPN
DOD5521
LCSC Part #
C53281978
Packaging
TO-252-4
Customer #
Key Attributes
100V 12A 2.5V 30W 86mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel TO-252-4 Single FETs, MOSFETs RoHS
Datasheetpdf iconDOINGTER DOD5521
In-Stock: 465
465 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.2267$ 1.13
50+$ 0.1783$ 8.92
150+$ 0.1576$ 23.64
500+$ 0.1317$ 65.85
2,500+$ 0.1202$ 300.50
5,000+$ 0.1133$ 566.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252-4
Drain to Source Voltage100V
Current - Continuous Drain(Id)12A
Output Capacitance(Coss)48pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)86mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)500pF
Gate Charge(Qg)16.8nC@10V
TypeN-Channel + P-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N+P channel MOSFET employs advanced trench technology and design to deliver superior RDS(on) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • N-Channel: VDS=100V, ID=12A, RDS(ON)<120mΩ@VGS=10V
  • RDS(ON)<140mΩ@VGS=4.5V
  • P-Channel: VDS=-100V, ID=-12A, RDS(ON)<200mΩ@VGS=-10V
  • RDS(ON)<250mΩ@VGS=-4.5V
  • Low gate charge.
  • Green/RoHS-compliant devices available.
  • Advanced high cell density trench technology for ultra-low RDS(ON).
  • Excellent package with superior thermal performance.