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DOINGTER DH025PGRoHS

Manufacturer
DOINGTERAsian Brands
MPN
DH025PG
LCSC Part #
C53281977
Packaging
TO-252
Customer #
Key Attributes
100V 60A 1.6V 113W 21mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS
Datasheetpdf iconDOINGTER DH025PG
In-Stock: 175
175 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5544$ 0.55
10+$ 0.4391$ 4.39
30+$ 0.3902$ 11.71
100+$ 0.3286$ 32.86
500+$ 0.3017$ 150.85
1,000+$ 0.2843$ 284.30
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage100V
Output Capacitance(Coss)330pF
Current - Continuous Drain(Id)60A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation113W
Reverse Transfer Capacitance (Crss@Vds)283pF
RDS(on)21mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)14.88nF
Gate Charge(Qg)39nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This P-channel MOSFET employs advanced trench technology and design to deliver excellent RDS(on) at low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = -100V, ID = -60A, RDS(ON) < 30mΩ at VGS = -10V (typical: 26mΩ)
  • Low gate charge.
  • Green/RoHS-compliant devices available.
  • Advanced high cell density trench technology for ultra-low RDS(ON).
  • Excellent package with superior thermal performance.
  • MSL3