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DOINGTER DH100PG-CRoHS

Manufacturer
DOINGTERAsian Brands
MPN
DH100PG-C
LCSC Part #
C53281976
Packaging
TO-252
Customer #
Key Attributes
100V 20A 1.6V 66W 80mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS
Datasheetpdf iconDOINGTER DH100PG-C
In-Stock: 500
500 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1928$ 0.96
50+$ 0.1517$ 7.59
150+$ 0.1341$ 20.12
500+$ 0.1122$ 56.10
2,500+$ 0.1024$ 256.00
5,000+$ 0.0965$ 482.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage100V
Output Capacitance(Coss)119pF
Current - Continuous Drain(Id)20A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation66W
Reverse Transfer Capacitance (Crss@Vds)92pF
RDS(on)80mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)4.077nF
Gate Charge(Qg)52nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This P-channel MOSFET utilizes advanced trench technology and design, offering excellent on-resistance and low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = -100V, ID = -20A, RDS(ON) < 100mΩ at VGS = -10V (typical: 80mΩ)
  • Low gate charge
  • Eco-friendly devices available
  • Advanced high-cell-density trench technology for ultra-low on-resistance
  • Excellent package with superior thermal performance
  • MSL3