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DOINGTER DE016PGRoHS

Manufacturer
DOINGTERAsian Brands
MPN
DE016PG
LCSC Part #
C53281974
Packaging
TO-252
Customer #
Key Attributes
60V 75A 1.8V 104W 12.5mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS
Datasheetpdf iconDOINGTER DE016PG
In-Stock: 305
305 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.418$ 0.42
10+$ 0.3269$ 3.27
30+$ 0.2895$ 8.69
100+$ 0.2407$ 24.07
500+$ 0.2196$ 109.80
1,000+$ 0.2066$ 206.60
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage60V
Output Capacitance(Coss)331pF
Current - Continuous Drain(Id)75A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)274pF
RDS(on)12.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)7.2nF
Gate Charge(Qg)88nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This P-channel MOSFET employs advanced SGT technology and design, delivering excellent low on-resistance RDS(on) and low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • Drain-source voltage VDS=-60V, drain current ID=-75A, on-resistance RDS(ON)<16mΩ at gate-source voltage VGS=-10V (typical: 13mΩ)
  • Low gate charge
  • RoHS-compliant devices available
  • Advanced high cell density SGT technology for ultra-low on-resistance RDS(ON)
  • Excellent package with superior thermal dissipation
  • Moisture Sensitivity Level MSL3