LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
DOINGTER DE025PG-B product image
  • DE025PG-B thumbnail 1
  • DE025PG-B thumbnail 2
  • DE025PG-B thumbnail 3
  • Pinout
  • Footprint
Images for reference only

DOINGTER DE025PG-BRoHS

Manufacturer
DOINGTERAsian Brands
MPN
DE025PG-B
LCSC Part #
C53281972
Packaging
TO-252
Customer #
Key Attributes
60V 40A 2.5V 71.4W 22.5mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS
Datasheetpdf iconDOINGTER DE025PG-B
In-Stock: 295
295 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1884$ 0.94
50+$ 0.1474$ 7.37
150+$ 0.1298$ 19.47
500+$ 0.1079$ 53.95
2,500+$ 0.0981$ 245.25
5,000+$ 0.0922$ 461.00
Standard Packaging2500/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage60V
Current - Continuous Drain(Id)40A
Output Capacitance(Coss)158pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation71.4W
RDS(on)22.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)122pF
Number1 P-Channel
Input Capacitance(Ciss)3.65nF
Gate Charge(Qg)60nC@10V
TypeP-Channel
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This P-channel MOSFET employs advanced trench technology and design, delivering excellent R<sub>DS(on)</sub> and low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • V​DS=-60V, I​D=-40A, R​DS(ON)<25mΩ at V​GS=-10V (typical: 21mΩ)
  • Low gate charge.
  • Green/RoHS-compliant devices available.
  • Advanced high cell density trench technology for ultra-low R​DS(ON).
  • Excellent package with superior thermal dissipation.
  • MSL3 rated.