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DOINGTER DE180PG-BRoHS

Manufacturer
DOINGTERAsian Brands
MPN
DE180PG-B
LCSC Part #
C53281969
Packaging
TO-252
Customer #
Key Attributes
60V 10A 1.6V 96W 170mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS
Datasheetpdf iconDOINGTER DE180PG-B
In-Stock: 150
150 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.0803$ 0.40
50+$ 0.0637$ 3.19
150+$ 0.0554$ 8.31
500+$ 0.0491$ 24.55
2,500+$ 0.0441$ 110.25
5,000+$ 0.0416$ 208.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage60V
Current - Continuous Drain(Id)10A
Output Capacitance(Coss)30pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)24pF
RDS(on)170mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)500pF
Gate Charge(Qg)16nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This P-channel MOSFET employs advanced trench technology and design, delivering superior RDS(on) and low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = -60V, ID = -10A, RDS(on) < 200mΩ @ VGS = -10V (typical: 155mΩ)
  • Low gate charge
  • Eco-friendly devices available
  • Advanced high cell density trench technology for ultra-low RDS(on)
  • Excellent package with superior thermal dissipation