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DOINGTER DD004PGRoHS

Manufacturer
DOINGTERAsian Brands
MPN
DD004PG
LCSC Part #
C53281968
Packaging
TO-252
Customer #
Key Attributes
40V 130A 2.5V 114W 3.2mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS
Datasheetpdf iconDOINGTER DD004PG
In-Stock: 178
178 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.3972$ 0.40
10+$ 0.3125$ 3.13
30+$ 0.2767$ 8.30
100+$ 0.2312$ 23.12
500+$ 0.21$ 105.00
1,000+$ 0.1986$ 198.60
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage40V
Output Capacitance(Coss)807pF
Current - Continuous Drain(Id)130A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation114W
Reverse Transfer Capacitance (Crss@Vds)626pF
RDS(on)3.2mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)7.1nF
Gate Charge(Qg)140nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This P-channel MOSFET employs advanced trench technology and design, delivering excellent RDS(on) and low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = -40V, ID = -130A, RDS(ON) < 4mΩ @ VGS = -10V (typical: 3.2mΩ)
  • Low gate charge
  • Eco-friendly devices available
  • Advanced high cell density trench technology for ultra-low RDS(ON)
  • Excellent package with good thermal dissipation performance
  • MSL3