DOINGTER DC033PG
| Manufacturer | DOINGTERAsian Brands |
| MPN | DC033PG |
| LCSC Part # | C53281961 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | 30V 25A 1.6V 40W 28mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 25A | |
| Output Capacitance(Coss) | 100pF | |
| Operating Temperature - | -50℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 40W | |
| RDS(on) | 28mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 9.2nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This P-channel MOSFET utilizes advanced trench technology and design, delivering excellent on-resistance and low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- V_DS = -30 V, I_D = -25 A, R_DS(ON) < 35 mΩ @ V_GS = -10 V
- Low gate charge.
- RoHS-compliant devices available.
- Advanced high cell density trench technology for ultra-low on-resistance.
- Excellent package with superior thermal dissipation.
In-Stock: 430
430 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0769 | $ 0.38 |
| 50+ | $ 0.0605 | $ 3.03 |
| 150+ | $ 0.0523 | $ 7.85 |
| 500+ | $ 0.0462 | $ 23.10 |
| 2,500+ | $ 0.0413 | $ 103.25 |
| 5,000+ | $ 0.0388 | $ 194.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 25A | |
| Output Capacitance(Coss) | 100pF | |
| Operating Temperature - | -50℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 40W | |
| RDS(on) | 28mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 9.2nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This P-channel MOSFET utilizes advanced trench technology and design, delivering excellent on-resistance and low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- V_DS = -30 V, I_D = -25 A, R_DS(ON) < 35 mΩ @ V_GS = -10 V
- Low gate charge.
- RoHS-compliant devices available.
- Advanced high cell density trench technology for ultra-low on-resistance.
- Excellent package with superior thermal dissipation.
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



