LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
DOINGTER DB003PG-S product image
  • DB003PG-S thumbnail 1
  • DB003PG-S thumbnail 2
  • DB003PG-S thumbnail 3
  • Pinout
  • Footprint
Images for reference only

DOINGTER DB003PG-SRoHS

Manufacturer
DOINGTERAsian Brands
MPN
DB003PG-S
LCSC Part #
C53281960
Packaging
TO-252
Customer #
Key Attributes
20V 120A 1V 38W 2.9mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS
Datasheetpdf iconDOINGTER DB003PG-S
In-Stock: 100
100 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2852$ 1.43
50+$ 0.2245$ 11.23
150+$ 0.1985$ 29.78
500+$ 0.166$ 83.00
2,500+$ 0.1515$ 378.75
5,000+$ 0.1428$ 714.00
Standard Packaging2500/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage20V
Current - Continuous Drain(Id)120A
Output Capacitance(Coss)1.599nF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation38W
RDS(on)2.9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)1.067nF
Number1 P-Channel
Input Capacitance(Ciss)14.999nF
Gate Charge(Qg)99nC@10V
TypeP-Channel
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This P-channel MOSFET employs advanced trench technology and design to deliver excellent RDS(on) and low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = -20V, ID = -120A, RDS(ON) < 3mΩ @ VGS = -4.5V
  • Low gate charge.
  • RoHS-compliant devices available.
  • Advanced high cell density trench technology for ultra-low RDS(ON).
  • Excellent package with good thermal dissipation performance.