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DOINGTER DB010PG-SRoHS

Manufacturer
DOINGTERAsian Brands
MPN
DB010PG-S
LCSC Part #
C53281959
Packaging
TO-252
Customer #
Key Attributes
20V 50A 700mV 31.25W 7mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS
Datasheetpdf iconDOINGTER DB010PG-S
In-Stock: 470
470 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1224$ 0.61
50+$ 0.0975$ 4.88
150+$ 0.0851$ 12.77
500+$ 0.0758$ 37.90
2,500+$ 0.0683$ 170.75
5,000+$ 0.0645$ 322.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage20V
Current - Continuous Drain(Id)50A
Output Capacitance(Coss)336pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation31.25W
Reverse Transfer Capacitance (Crss@Vds)304pF
RDS(on)7mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.59nF
Gate Charge(Qg)22nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This P-channel MOSFET employs advanced trench technology and design, delivering superior RDS(on) and low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS=-20V, ID=-50A, RDS(ON)<10mΩ@VGS=-4.5V (typical: 7mΩ)
  • Low gate charge.
  • RoHS-compliant green devices available.
  • Advanced high cell density trench technology for ultra-low RDS(ON).
  • Excellent package with superior thermal dissipation.
  • MSL3 rated.