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DOINGTER DJ18NFGRoHS

Manufacturer
DOINGTERAsian Brands
MPN
DJ18NFG
LCSC Part #
C53281958
Packaging
TO-252
Customer #
Key Attributes
200V 18A 3V 104W 120mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS
Datasheetpdf iconDOINGTER DJ18NFG
In-Stock: 1,235
1,235 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2274$ 1.14
50+$ 0.1794$ 8.97
150+$ 0.1588$ 23.82
500+$ 0.1331$ 66.55
2,500+$ 0.1217$ 304.25
5,000+$ 0.1148$ 574.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage200V
Current - Continuous Drain(Id)18A
Output Capacitance(Coss)172pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation104W
RDS(on)120mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)9.6pF
Number1 N-channel
Input Capacitance(Ciss)1.15nF
Gate Charge(Qg)25nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET employs advanced planar technology and design to deliver excellent RDS(on) at low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = 200 V, ID = 18 A, RDS(ON) < 150 mΩ @ VGS = 10 V (typical: 120 mΩ)
  • Low gate charge
  • Green compliant devices available
  • Advanced high cell density trench technology for ultra-low RDS(ON)
  • Excellent package with superior thermal performance
  • MSL3