DOINGTER DJ05NG-A
| Manufacturer | DOINGTERAsian Brands |
| MPN | DJ05NG-A |
| LCSC Part # | C53281957 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | 200V 5A 3.5V 33W 470mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 5A | |
| Output Capacitance(Coss) | 68pF | |
| Operating Temperature - | -50℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 33W | |
| RDS(on) | 470mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 23.1pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 289pF | |
| Gate Charge(Qg) | 6.6nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET employs advanced planar technology and design, delivering superior RDS(ON) and low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 200V, ID = 5A, RDS(ON) < 600mΩ @ VGS = 10V (typical: 470mΩ)
- Low gate charge.
- Green/RoHS-compliant devices available.
- Advanced high cell density trench technology for ultra-low RDS(ON).
- Excellent package with superior thermal dissipation.
- MSL3.
In-Stock: 290
290 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1213 | $ 0.61 |
| 50+ | $ 0.0966 | $ 4.83 |
| 150+ | $ 0.0843 | $ 12.65 |
| 500+ | $ 0.0751 | $ 37.55 |
| 2,500+ | $ 0.0677 | $ 169.25 |
| 5,000+ | $ 0.064 | $ 320.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 5A | |
| Output Capacitance(Coss) | 68pF | |
| Operating Temperature - | -50℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 33W | |
| RDS(on) | 470mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 23.1pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 289pF | |
| Gate Charge(Qg) | 6.6nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET employs advanced planar technology and design, delivering superior RDS(ON) and low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 200V, ID = 5A, RDS(ON) < 600mΩ @ VGS = 10V (typical: 470mΩ)
- Low gate charge.
- Green/RoHS-compliant devices available.
- Advanced high cell density trench technology for ultra-low RDS(ON).
- Excellent package with superior thermal dissipation.
- MSL3.
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



