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DOINGTER DI300NGRoHS

Manufacturer
DOINGTERAsian Brands
MPN
DI300NG
LCSC Part #
C53281956
Packaging
TO-252
Customer #
Key Attributes
150V 7A 2V 36.8W 240mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS
Datasheetpdf iconDOINGTER DI300NG
In-Stock: 440
440 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1106$ 0.55
50+$ 0.0872$ 4.36
150+$ 0.0755$ 11.33
500+$ 0.0667$ 33.35
2,500+$ 0.0596$ 149.00
5,000+$ 0.0561$ 280.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage150V
Current - Continuous Drain(Id)7A
Output Capacitance(Coss)32pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation36.8W
Reverse Transfer Capacitance (Crss@Vds)26.2pF
RDS(on)240mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)600pF
Gate Charge(Qg)8.2nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET utilizes advanced trench technology and design, delivering excellent RDS(on) and low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = 150V, ID = 7A, RDS(ON) < 300 mΩ @ VGS = 10V (typical: 240 mΩ)
  • Low gate charge.
  • Available in eco-friendly package.
  • Advanced high cell density trench technology for ultra-low RDS(ON).
  • Excellent package with superior thermal performance.
  • MSL3