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DOINGTER DH030NG-CRoHS

Manufacturer
DOINGTERAsian Brands
MPN
DH030NG-C
LCSC Part #
C53281954
Packaging
TO-252
Customer #
Key Attributes
100V 30A 1.5V 88W 23mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS
Datasheetpdf iconDOINGTER DH030NG-C
In-Stock: 500
500 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1542$ 0.77
50+$ 0.1214$ 6.07
150+$ 0.1073$ 16.10
500+$ 0.0897$ 44.85
2,500+$ 0.0819$ 204.75
5,000+$ 0.0772$ 386.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage100V
Current - Continuous Drain(Id)30A
Output Capacitance(Coss)126pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation88W
Reverse Transfer Capacitance (Crss@Vds)99pF
RDS(on)23mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.857nF
Gate Charge(Qg)13nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET employs advanced trench technology and design, delivering superior RDS(on) and low gate charge, suitable for a wide range of applications.

Features

AI Translation
  • VDS = 100 V, ID = 30 A, RDS(ON) < 30 mΩ @ VGS = 10 V
  • Low gate charge
  • Green/eco-friendly devices available
  • Advanced high cell density trench technology for ultra-low RDS(ON)
  • Excellent package with superior thermal dissipation