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DOINGTER DS008NGRoHS

Manufacturer
DOINGTERAsian Brands
MPN
DS008NG
LCSC Part #
C53281953
Packaging
TO-252
Customer #
Key Attributes
70V 70A 2.73V 116W 7mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS
Datasheetpdf iconDOINGTER DS008NG
In-Stock: 2,485
2,485 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1941$ 0.97
50+$ 0.1531$ 7.66
150+$ 0.1355$ 20.33
500+$ 0.1135$ 56.75
2,500+$ 0.1037$ 259.25
5,000+$ 0.0979$ 489.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage70V
Current - Continuous Drain(Id)70A
Output Capacitance(Coss)258pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))2.73V
Pd - Power Dissipation116W
Reverse Transfer Capacitance (Crss@Vds)236pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.4nF
Gate Charge(Qg)35nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(ON) and low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = 70V, ID = 70A, RDS(ON) < 8.4 mΩ @ VGS = 10V ~ (Typical: 7 mΩ)
  • Low gate charge.
  • Green and eco-friendly devices available.
  • Advanced high cell density trench technology for ultra-low RDS(ON).
  • Excellent package with good thermal dissipation performance.
  • MSL3.