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DOINGTER DE012NG-HRoHS

Manufacturer
DOINGTERAsian Brands
MPN
DE012NG-H
LCSC Part #
C53281952
Packaging
TO-252
Customer #
Key Attributes
60V 55A 3V 63W 9mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS
Datasheetpdf iconDOINGTER DE012NG-H
In-Stock: 145
145 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1377$ 0.69
50+$ 0.1084$ 5.42
150+$ 0.0937$ 14.06
500+$ 0.0827$ 41.35
2,500+$ 0.074$ 185.00
5,000+$ 0.0696$ 348.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage60V
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)55A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation63W
Reverse Transfer Capacitance (Crss@Vds)151pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.045nF
Gate Charge(Qg)16nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET utilizes advanced trench technology and design, delivering excellent RDS(on) and low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = 60V, ID = 55A, RDS(ON) < 12 mΩ @ VGS = 10V
  • Low gate charge
  • Green/eco-friendly devices available
  • Advanced high cell density trench technology for ultra-low RDS(ON)
  • Excellent package with superior thermal performance