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DOINGTER DE020NG-CRoHS

Manufacturer
DOINGTERAsian Brands
MPN
DE020NG-C
LCSC Part #
C53281951
Packaging
TO-252
Customer #
Key Attributes
60V 40A 1.6V 48W 12mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS
Datasheetpdf iconDOINGTER DE020NG-C
In-Stock: 2,555
2,555 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1081$ 0.54
50+$ 0.0853$ 4.27
150+$ 0.0739$ 11.09
500+$ 0.0653$ 32.65
2,500+$ 0.0585$ 146.25
5,000+$ 0.0551$ 275.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage60V
Output Capacitance(Coss)102pF
Current - Continuous Drain(Id)40A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation48W
RDS(on)12mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)93pF
Number1 N-channel
Input Capacitance(Ciss)1.45nF
Gate Charge(Qg)27nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET utilizes advanced trench technology and design, delivering excellent RDS(on) and low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS=60V, ID=40A, RDS(ON)<15mΩ@VGS=10V (typical: 12mΩ)
  • Low gate charge.
  • RoHS-compliant devices available.
  • Advanced high cell density trench technology for ultra-low RDS(ON).
  • Excellent package with superior thermal dissipation performance.
  • MSL3.