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DOINGTER DE030NG-HRoHS

Manufacturer
DOINGTERAsian Brands
MPN
DE030NG-H
LCSC Part #
C53281950
Packaging
TO-252
Customer #
Key Attributes
60V 30A 1.6V 55W 17mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS
Datasheetpdf iconDOINGTER DE030NG-H
In-Stock: 2,475
2,475 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.082$ 0.41
50+$ 0.0653$ 3.27
150+$ 0.057$ 8.55
500+$ 0.0508$ 25.40
2,500+$ 0.0457$ 114.25
5,000+$ 0.0432$ 216.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage60V
Current - Continuous Drain(Id)30A
Output Capacitance(Coss)80pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation55W
RDS(on)17mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)45pF
Number1 N-channel
Input Capacitance(Ciss)1.05nF
Gate Charge(Qg)25nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET employs advanced trench technology and design, delivering superior RDS(ON) and low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • V_DS=60V, I_D=30A, R_DS(ON)<30mΩ @ V_GS=10V
  • Low gate charge
  • Green/RoHS-compliant devices available
  • Advanced high-cell-density trench technology for ultra-low R_DS(ON)
  • Excellent package with superior thermal performance