DOINGTER DE045NG-L
| Manufacturer | DOINGTERAsian Brands |
| MPN | DE045NG-L |
| LCSC Part # | C53281949 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | 60V 20A 1V 40W 35mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 20A | |
| Operating Temperature - | -50℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 40W | |
| RDS(on) | 35mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 500pF | |
| Gate Charge(Qg) | 14nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design, delivering excellent R_DS(on) and low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- V_DS = 60V, I_D = 20A, R_DS(ON) < 44mΩ @ V_GS = 10V
- Low gate charge
- Available in eco-friendly package
- Advanced high cell-density trench technology for ultra-low R_DS(ON)
- Excellent package with superior thermal dissipation
Applications
AI Translation
- Switching power supplies
- Motor drives
- Battery protection circuits
- Load switches
- Lighting systems
In-Stock: 380
380 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0944 | $ 0.47 |
| 50+ | $ 0.0752 | $ 3.76 |
| 150+ | $ 0.0656 | $ 9.84 |
| 500+ | $ 0.0584 | $ 29.20 |
| 2,500+ | $ 0.0526 | $ 131.50 |
| 5,000+ | $ 0.0498 | $ 249.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 20A | |
| Operating Temperature - | -50℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 40W | |
| RDS(on) | 35mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 500pF | |
| Gate Charge(Qg) | 14nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design, delivering excellent R_DS(on) and low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- V_DS = 60V, I_D = 20A, R_DS(ON) < 44mΩ @ V_GS = 10V
- Low gate charge
- Available in eco-friendly package
- Advanced high cell-density trench technology for ultra-low R_DS(ON)
- Excellent package with superior thermal dissipation
Applications
AI Translation
- Switching power supplies
- Motor drives
- Battery protection circuits
- Load switches
- Lighting systems
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



