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DOINGTER DE100NGRoHS

Manufacturer
DOINGTERAsian Brands
MPN
DE100NG
LCSC Part #
C53281948
Packaging
TO-252
Customer #
Key Attributes
60V 8A 1.5V 16W 86mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS
Datasheetpdf iconDOINGTER DE100NG
In-Stock: 1,740
1,740 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0657$ 0.66
100+$ 0.0518$ 5.18
300+$ 0.0448$ 13.44
2,500+$ 0.0396$ 99.00
5,000+$ 0.0354$ 177.00
10,000+$ 0.0334$ 334.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage60V
Current - Continuous Drain(Id)8A
Output Capacitance(Coss)28pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation16W
RDS(on)86mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)22pF
Number1 N-channel
Input Capacitance(Ciss)349pF
Gate Charge(Qg)8nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET employs advanced trench technology and design, delivering superior RDS(ON) and low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS=60V, ID=8A, RDS(ON)<100mΩ at VGS=10V
  • Low gate charge
  • RoHS-compliant devices available
  • Advanced high cell density trench technology for ultra-low RDS(ON)
  • Excellent package with superior thermal performance