LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
DOINGTER DD016NG product image
  • DD016NG thumbnail 1
  • DD016NG thumbnail 2
  • DD016NG thumbnail 3
  • Pinout
  • Footprint
Images for reference only

DOINGTER DD016NGRoHS

Manufacturer
DOINGTERAsian Brands
MPN
DD016NG
LCSC Part #
C53281794
Packaging
TO-252
Customer #
Key Attributes
40V 30A 1.3V 45W 10mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS
Datasheetpdf iconDOINGTER DD016NG
In-Stock: 1,555
1,555 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.0962$ 0.48
50+$ 0.0762$ 3.81
150+$ 0.0662$ 9.93
500+$ 0.0587$ 29.35
2,500+$ 0.0527$ 131.75
5,000+$ 0.0497$ 248.50
Standard Packaging2500/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage40V
Current - Continuous Drain(Id)30A
Output Capacitance(Coss)109pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation45W
RDS(on)10mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)96pF
Number1 N-channel
Input Capacitance(Ciss)1.25nF
Gate Charge(Qg)20nC@10V
TypeN-Channel
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Features

AI Translation
  • Drain-to-source voltage 40V, drain current 30A, on-resistance less than 12mΩ (typical: 9mΩ) at gate-to-source voltage 10V
  • Low gate charge
  • Green/eco-friendly device options available
  • Advanced high cell density trench technology for ultra-low on-resistance
  • Excellent package design with good thermal dissipation performance
  • Moisture sensitivity level 3