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DOINGTER DD025NGRoHS

Manufacturer
DOINGTERAsian Brands
MPN
DD025NG
LCSC Part #
C53281793
Packaging
TO-252
Customer #
Key Attributes
40V 25A 1.6V 26W 18mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS
Datasheetpdf iconDOINGTER DD025NG
In-Stock: 2,290
2,290 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0694$ 0.69
100+$ 0.0553$ 5.53
300+$ 0.0482$ 14.46
2,500+$ 0.0429$ 107.25
5,000+$ 0.0387$ 193.50
10,000+$ 0.0366$ 366.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage40V
Current - Continuous Drain(Id)25A
Output Capacitance(Coss)70pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation26W
Reverse Transfer Capacitance (Crss@Vds)39pF
RDS(on)18mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)825pF
Gate Charge(Qg)13nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET employs advanced trench technology and design to deliver excellent RDS(on) and low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = 40V, ID = 25A, RDS(ON) < 25 mΩ @ VGS = 10V (typical: 18 mΩ)
  • Low gate charge.
  • Green/eco-friendly devices available.
  • Advanced high cell-density trench technology for ultra-low RDS(ON).
  • Excellent package with good thermal dissipation performance.
  • MSL3.