DOINGTER DB010NG
| Manufacturer | DOINGTERAsian Brands |
| MPN | DB010NG |
| LCSC Part # | C53281791 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | 20V 30A 750mV 38W 8mΩ@4.5V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 30A | |
| Output Capacitance(Coss) | 178pF | |
| Operating Temperature - | -50℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 750mV | |
| Pd - Power Dissipation | 38W | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 8mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 15nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- VDS=20V, ID=30A, RDS(ON)<10mΩ at VGS=4.5V (typical: 8mΩ)
- Low gate charge.
- RoHS-compliant devices available.
- Advanced high cell density trench technology for ultra-low on-resistance.
- Excellent package with good thermal dissipation performance.
- MSL3
In-Stock: 2,500
2,500 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0746 | $ 0.75 |
| 100+ | $ 0.0594 | $ 5.94 |
| 300+ | $ 0.0518 | $ 15.54 |
| 2,500+ | $ 0.0461 | $ 115.25 |
| 5,000+ | $ 0.0416 | $ 208.00 |
| 10,000+ | $ 0.0393 | $ 393.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 30A | |
| Output Capacitance(Coss) | 178pF | |
| Operating Temperature - | -50℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 750mV | |
| Pd - Power Dissipation | 38W | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 8mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 15nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- VDS=20V, ID=30A, RDS(ON)<10mΩ at VGS=4.5V (typical: 8mΩ)
- Low gate charge.
- RoHS-compliant devices available.
- Advanced high cell density trench technology for ultra-low on-resistance.
- Excellent package with good thermal dissipation performance.
- MSL3
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



