HXY MOSFET IPC100N04S5-1R2-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	IPC100N04S5-1R2-HXY
LCSC Part #	C53263407
Packaging	DFN-8L(5x6)
Customer #
Key Attributes	114W 40V 219A 2.3V 1.2mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET IPC100N04S5-1R2-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	3.257nF
Pd - Power Dissipation	114W
Configuration	Standalone
Drain to Source Voltage	40V
Current - Continuous Drain(Id)	219A
Operating Temperature -	-50℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.3V
Reverse Transfer Capacitance (Crss@Vds)	196pF
RDS(on)	1.2mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	6.461nF
Gate Charge(Qg)	55nC@4.5V
Vgs	±20V
Type	N-Channel

In-Stock: 99

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Qty	Unit Price	Total Amount
1+	$ 1.5374$ 1.2300	$ 1.23
10+	$ 1.2804$ 1.0244	$ 10.24
30+	$ 1.1392$ 0.9114	$ 27.34
100+	$ 0.9789$ 0.7832	$ 78.32
500+	$ 0.9091$ 0.7273	$ 363.65
1,000+	$ 0.8758$ 0.7007	$ 700.70
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	3.257nF
Pd - Power Dissipation	114W
Configuration	Standalone
Drain to Source Voltage	40V
Current - Continuous Drain(Id)	219A
Operating Temperature -	-50℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.3V
Reverse Transfer Capacitance (Crss@Vds)	196pF
RDS(on)	1.2mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	6.461nF
Gate Charge(Qg)	55nC@4.5V
Vgs	±20V
Type	N-Channel