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HXY MOSFET IPC100N04S5L1R1ATMA1-HXY product image
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HXY MOSFET IPC100N04S5L1R1ATMA1-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
IPC100N04S5L1R1ATMA1-HXY
LCSC Part #
C53263395
Packaging
DFN-8L(5x6)
Customer #
Key Attributes
114W 40V 219A 2.3V 1.2mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET IPC100N04S5L1R1ATMA1-HXY
In-Stock: 97
97 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.5644$ 1.2516$ 1.25
10+$ 1.3026$ 1.0421$ 10.42
30+$ 1.1598$ 0.9279$ 27.84
100+$ 0.9964$ 0.7972$ 79.72
500+$ 0.925$ 0.7400$ 370.00
1,000+$ 0.8917$ 0.7134$ 713.40
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingDFN-8L(5x6)
Output Capacitance(Coss)3.257nF
Pd - Power Dissipation114W
ConfigurationStandalone
Drain to Source Voltage40V
Current - Continuous Drain(Id)219A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Reverse Transfer Capacitance (Crss@Vds)196pF
RDS(on)1.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.461nF
Gate Charge(Qg)55nC@4.5V
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

The IPC100N04S5L1R1ATMA1 employs advanced SGT MOSFET technology, offering low on-resistance, low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced robustness and versatility.

Applications

AI Translation
  • Consumer electronics power supplies
  • Motor control
  • Synchronous rectification
  • Isolated DC