HXY MOSFET SISA34DN-T1-GE3-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	SISA34DN-T1-GE3-HXY
LCSC Part #	C53263379
Packaging	DFN-8L(3x3)
Customer #
Key Attributes	30W 30V 40A 2.5V 5mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET SISA34DN-T1-GE3-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	498pF
Pd - Power Dissipation	30W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	40A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Reverse Transfer Capacitance (Crss@Vds)	41pF
RDS(on)	5mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	814pF
Gate Charge(Qg)	8nC@4.5V
Vgs	±20V
Type	N-Channel

In-Stock: 99

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Qty	Unit Price	Total Amount
1+	$ 0.7997$ 0.6398	$ 0.64
10+	$ 0.6489$ 0.5192	$ 5.19
30+	$ 0.5728$ 0.4583	$ 13.75
100+	$ 0.4982$ 0.3986	$ 39.86
500+	$ 0.4538$ 0.3631	$ 181.55
1,000+	$ 0.4316$ 0.3453	$ 345.30
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	498pF
Pd - Power Dissipation	30W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	40A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Reverse Transfer Capacitance (Crss@Vds)	41pF
RDS(on)	5mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	814pF
Gate Charge(Qg)	8nC@4.5V
Vgs	±20V
Type	N-Channel