HXY MOSFET IRLR8113PBF-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	IRLR8113PBF-HXY
LCSC Part #	C53263276
Packaging	TO-252-2L
Customer #
Key Attributes	54W 30V 80A 1.6V 5mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET IRLR8113PBF-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	200pF
Pd - Power Dissipation	54W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	80A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
RDS(on)	5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	180pF
Number	1 N-channel
Input Capacitance(Ciss)	1.16nF
Gate Charge(Qg)	11.1nC@4.5V
Vgs	±20V
Type	N-Channel

In-Stock: 90

90 In stock, ships now

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Qty	Unit Price	Total Amount
5+	$ 0.2501$ 0.2126	$ 1.06
50+	$ 0.1981$ 0.1684	$ 8.42
150+	$ 0.1758$ 0.1495	$ 22.43
500+	$ 0.148$ 0.1258	$ 62.90
2,500+	$ 0.1357$ 0.1154	$ 288.50
5,000+	$ 0.1282$ 0.1090	$ 545.00
Standard Packaging2500/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	200pF
Pd - Power Dissipation	54W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	80A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
RDS(on)	5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	180pF
Number	1 N-channel
Input Capacitance(Ciss)	1.16nF
Gate Charge(Qg)	11.1nC@4.5V
Vgs	±20V
Type	N-Channel