HXY MOSFET SIS444DN-T1-GE3-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	SIS444DN-T1-GE3-HXY
LCSC Part #	C53263211
Packaging	DFN-8L(3x3)
Customer #
Key Attributes	31.7W 30V 100A 1.6V 2.5mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET SIS444DN-T1-GE3-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	499pF
Pd - Power Dissipation	31.7W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	100A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Reverse Transfer Capacitance (Crss@Vds)	430pF
RDS(on)	2.5mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	3.499nF
Gate Charge(Qg)	69nC@10V
Vgs	±20V
Type	N-Channel

In-Stock: 99

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Qty	Unit Price	Total Amount
1+	$ 0.5093$ 0.4075	$ 0.41
10+	$ 0.403$ 0.3224	$ 3.22
30+	$ 0.357$ 0.2856	$ 8.57
100+	$ 0.3015$ 0.2412	$ 24.12
500+	$ 0.2761$ 0.2209	$ 110.45
1,000+	$ 0.2618$ 0.2095	$ 209.50
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	499pF
Pd - Power Dissipation	31.7W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	100A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Reverse Transfer Capacitance (Crss@Vds)	430pF
RDS(on)	2.5mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	3.499nF
Gate Charge(Qg)	69nC@10V
Vgs	±20V
Type	N-Channel